Introduction

    In the world of high voltage systems, the need for reliable and efficient switching technology is paramount. The IGBT-based high-voltage (HV) relay has emerged as a key player in modern electrical and electronic applications, offering advantages in terms of speed, efficiency, and durability. IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the best features of both field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs), enabling high-speed switching with minimal losses. This article will explore the structure, benefits, and applications of IGBT-based HV relays, shedding light on how they are revolutionizing power electronics.